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IMAGE SENSOR
CCD area image sensor
S7010/S7011/S7015 series
Front-illuminated FFT-CCD
S7010/S7011/S7015 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7010/S7011/S7015 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S7010/S7011/S7015 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S7010/S7011/S7015 series also feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S7010/S7011/S7015 series have an effective pixel size of 24 x 24 m and are available in image areas ranging from 12.288 (H) x 1.44 (V) mm2 (512 x 60 pixels) up to a large image area of 24.576 (H) x 6.048 (V) mm2 (1024 x 252 pixels).
Features
Applications
l 512 (H) x 60 (V) to 1024 (H) x 252 (V) pixel format l Pixel size: 24 x 24 m l Line/pixel binning l 100 % fill factor l Wide dynamic range l Low dark signal l Low readout noise l MPP operation
I Selection guide
Type No. S7010-0906 S7010-0907 S7010-0908 S7010-1006 S7010-1007 S7010-1008 S7011-0906 S7011-0907 S7011-1006 S7011-1007 S7015-0908 S7015-1008 Cooling Number of total pixels 532 x 64 532 x 128 532 x 256 1044 x 64 1044 x 128 1044 x 256 532 x 64 532 x 128 1044 x 64 1044 x 128 532 x 256 1044 x 256
l Fluorescence spectrometer, ICP l Raman spectrometer l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection
Number of active pixels 512 x 60 512 x 124 512 x 252 1024 x 60 1024 x 124 1024 x 252 512 x 60 512 x 124 1024 x 60 1024 x 124 512 x 252 1024 x 252
Active area [mm (H) x mm (V)] 12.288 x 1.440 12.288 x 2.976 12.288 x 6.048 24.576 x 1.440 24.576 x 2.976 24.576 x 6.048 12.288 x 1.440 12.288 x 2.976 24.576 x 1.440 24.576 x 2.976 12.288 x 6.048 24.576 x 6.048
Suitable multichannel detector Head
Non-cooled
C7020
One-stage TE-cooled
C7021 C7025
I General ratings
Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package Window *1
*1: Window-less is available upon request. *2: Sapphire glass is available upon request.
Specification 24 (H) x 24 (V) m 2 phase 2 phase One-stage MOSFET source follower 24 pin ceramic DIP (refer to dimensional outlines) S7010 series: quartz glass S7011 series: sapphire glass S7015 series: quartz glass *2
1
CCD area image sensor
I A b s o lu te m a x im u m ra tin g s (T a = 2 5 C )
P a ra m e te r O p e ra tin g te m p e ra tu re S to ra g e te m p e ra tu re O D v o lta g e R D v o lta g e IS V v o lta g e IS H v o lta g e IG V v o lta g e IG H v o lta g e S G v o lta g e O G v o lta g e R G v o lta g e T G v o lta g e V e rtic a l c lo c k v o lta g e H o riz o n ta l c lo c k v o lta g e
S7010/S7011/S7015 series
M in . -5 0 -5 0 -0 .5 -0 .5 -0 .5 -0 .5 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 Typ. M a x. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 U n it C C V V V V V V V V V V V V
S ym bol Topr T s tg VOD VRD V IS V V IS H V IG 1 V , V IG 2 V V IG 1 H , V IG 2 H VSG VOG VRG VTG V P1V, V P2V V P1H , V P2H
I O p e ra tin g c o n d itio n s (M P P m o d e , T a = 2 5 C )
P a ra m e te r O u tp u t tra n s is to r d ra in v o lta g e R e s e t d ra in v o lta g e O u tp u t g a te v o lta g e S u b s tra te v o lta g e T e s t p o in t (v e rtic a l in p u t s o u rc e ) T e s t p o in t (h o riz o n ta l in p u t s o u rc e ) T e s t p o in t (v e rtic a l in p u t g a te ) T e s t p o in t (h o riz o n ta l in p u t g a te ) H ig h V e rtic a l s h ift re g is te r c lo c k v o lta g e Low H ig h H o riz o n ta l s h ift re g is te r c lo c k v o lta g e Low H ig h S u m m in g g a te v o lta g e Low H ig h R e s e t g a te v o lta g e Low H ig h T ra n s fe r g a te v o lta g e Low
S ym bol VOD VRD VOG VSS V IS V V IS H V IG 1 V , V IG 2 V V IG 1 H , V IG 2 H V P1VH , V P2VH V P1VL, V P2VL V P1H H , V P2H H V P1H L, V P2H L VSGH VSGL VRGH VRGL VTGH VTGL
M in . 18 1 1 .5 1 -8 -8 4 -9 4 -9 4 -9 4 -9 4 -9
Typ. 20 12 3 0 VRD VRD 0 0 6 -8 6 -8 6 -8 6 -8 6 -8
M a x. 22 1 2 .5 5 8 -7 8 -7 8 -7 8 -7 8 -7
U n it V V V V V V V V V V V V V
I E le c tric a l c h a ra c te ris tic s (Ta = 2 5 C )
P a ra m e te r S ym bol M in . Typ. S ig n a l o u tp u t fre q u e n c y fc V e rtic a l s h ift re g is te r c a p a c ita n c e * 3 C P1V, C P2V 3 ,0 0 0 3 H o riz o n ta l s h ift re g is te r c a p a c ita n c e * C P1H , C P2H 120 S u m m in g g a te c a p a c ita n c e CSG 7 R e s e t g a te c a p a c ita n c e CRG 7 T ra n s fe r g a te c a p a c ita n c e C TG 120 C h a rg e tra n s fe r e ffic ie n c y * 4 CTE 0 .9 9 9 9 5 0 .9 9 9 9 9 D C o u tp u t le v e l * 5 Vout 12 15 O u tp u t im p e d a n c e * 5 Zo 3 P o w e r c o n s u m p tio n * 5 * 6 P 15 * 3 : S 7 0 1 0 /S 7 0 11 -1 0 0 7 * 4 : C h a rg e tra n s fe r e ffic ie n c y p e r p ix e l, m e a s u re d a t h a lf o f th e fu ll w e ll. * 5 : T h e v a lu e s d e p e n d o n th e lo a d re s is ta n c e . (ty p ic a l, V O D = 2 0 V, lo a d re s is ta n c e = 2 2 k W ) * 6 : P o w e r c o n s u m p tio n o f th e o n -c h ip a m p lifie r.
M a x. 1 18 -
U n it MHz pF pF pF pF pF V kW mW
I E le c tric a l a n d o p tic a l c h a ra c te ris tic s (Ta = 2 5 C , u n le s s o th e rw is e n o te d )
P a ra m e te r S a tu ra tio n o u tp u t v o lta g e F u ll w e ll c a p a c ity C C D n o d e s e n s itiv ity D a rk c u rre n t * 8 M P P m o d e (te n ta tiv e d a ta ) R e a d o u t n o is e * 9 *10 V e rtic a l Horizontal *7 2 5 C 0 C S ym bol Vsat Fw Sv DS M in . 1 5 0 ,0 0 0 3 0 0 ,0 0 0 1 .8 2 5 ,0 0 0 1 2 ,0 0 0 -
Nr L in e b in n n g D y n a m ic ra n g e DR A re a s c a n n in g P h o to re s p o n s e n o n -u n ifo rm ity * 1 1 PRNU S p e c tra l re s p o n s e ra n g e l * 7 : L a rg e h o riz o n ta l fu ll w e ll fo r v e rtic a l b in n in g o p e ra tio n . * 8 : D a rk c u rre n t n e a rly d o u b le s fo r e v e ry 5 to 7 C in c re a s e in te m p e ra tu re . * 9 : -4 0 C , o p e ra tin g fre q u e n c y is 1 5 0 k H z . * 1 0 : D y n a m ic ra n g e : D R = F u ll w e ll/R e a d o u t n o is e . * 11 : M e a s u re d a t h a lf o f fu ll w e ll c a p a c ity. P h o to re s p o n s e n o n -u n ifo rm ity : Fixed pattern noise (peak to peak) P R N U (% ) = x 100 Signal
Typ. Fw x Sv 3 0 0 ,0 0 0 6 0 0 ,0 0 0 2 .2 400 20 8 7 5 ,0 0 0 3 7 ,5 0 0 3 4 0 0 to 1 ,1 0 0
M a x. 3000 150 12 10 -
U n it V e
-
V /e
-
e /p ix e l/s e rm s % nm
2
CCD area image sensor
I Spectral response (without window)
50 (Typ. Ta=25 C)
S7010/S7011/S7015 series
I Spectral transmittance characteristics
100 90 (Typ. Ta=25 C)
QUANTUM EFFICIENCY (%)
40
80
TRANSMITTANCE (%)
QUARTZ WINDOW 70 SAPPHIRE WINDOW 60 50 40 30 20 10
30
20
10
0 400
500
600
700
800
900
1000 1100 1200
0 100 200 300 400 500 600 700 800 900 1000
WAVELENGTH (nm)
KMPDB0051EA
WAVELENGTH (nm)
KMPDB0101EA
I Device structure, line output format
IG1V IG2V ISV 24 23 22 SS 20 TG 16 P1V 15 P2V 14
V
......
V=60, 124, 252 H=512, 1024 ...... H
1 RG RD OS 1
D1 D2 D3 D4 D5 D6 D7 D8 D9 D10
2 3
......
D11 D12 D13 D14 D15 D16 D17 D18 D19 D20
13 ISH 12 IG1H
4 OD
5 OG
9 10 11 IG2H 2 ISOLATION 512 or 2 ISOLATION P2H P1H 1024 4 OPTICAL SIGNAL OUT 4 OPTICAL 4 BLANK 4 BLANK BLACK BLACK
6 SG
KMPDC0015EB
Pixel format
Blank 4 Optical Black 4 Left Horizontal Direction (R) Right Isolation Effective Isolation 2 512 or 1024 2 Top Vertical Direction (R) Bottom Isolation Effective Isolation 2 60, 124 or 252 2 Optical Black 4 Blank 4
3
CCD area image sensor
I Timing chart
S7010/S7011/S7015 series
Line binning
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 S1..S512 D19 D3..D10, S1..S1024, D11..D18 D20: S701*-0906/-0907/-0908 : S701*-1006/-1007/-1008 1 2 3 4..530 531 4..1042 1043 532 : S701*-0906/-0907/-0908 1044: S701*-1006/-1007/-1008 VERTICAL BINNING PERIOD READOUT PERIOD (Shutter must be closed) (Shutter must be closed) 64 60 + 4 (ISOLATION): S701*-0906/-1006 63 3.. 62 128 124 + 4 (ISOLATION): S701*-0907/-1007 3..126 127 256 252 + 4 (ISOLATION): S701*-0908/-1008 3..254 255 2 Tovr
KMPDC0122EA
Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG P1H Overlap time Tovr *12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *13: In case of S701 * -0908/-1007.
Remark * *
Min. 6 *! 200 500 10 500 10 100 5 3
-
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
Area scanning 1: low dark current mode
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64 60 + 4 (ISOLATION): S701*-0906/-1006 4..127 128124 + 4 (ISOLATION): S701*-0907/-1007 4..255 256252 + 4 (ISOLATION): S701*-0908/-1008 3
P2H, SG RG OS
Tpwr
D1
D2
D3
S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17
D19
D20: S701*-0906/-0907/-0908 : S701*-1006/-1007/-1008
KMPDC0123EA
4
CCD area image sensor
S7010/S7011/S7015 series
Remark *" *" Min. 6 *# 200 500 10 500 10 100 5 3 Typ. 50 50 Max. Unit s ns ns ns % ns ns % ns ns s
Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG P1H Overlap time Tovr *14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *15: In case of S701 * -0908/-1007.
-
Area scanning 2: large full well mode
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64 60 + 4 (ISOLATION): S701*-0906/-1006 4..127 128124 + 4 (ISOLATION): S701*-0907/-1007 4..255 256252 + 4 (ISOLATION): S701*-0908/-1008 3
P2H, SG RG OS
Tpwr
D1
D2
D3
S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17
D19
D20: S701*-0906/-0907/-0908 : S701*-1006/-1007/-1008
KMPDC0124EA
Parameter Symbol Remark Pulse width Tpwv *$ P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh *$ P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *16: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *17: In case of S701 * -0908/-1007.
Min. 6 *% 200 500 10 500 10 100 5 3
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
5
CCD area image sensor
I Dimensional outlines (unit: mm) S7010-0906/-0907
a PHOTOSENSITIVE SURFACE 1.3 0.3
S7010/S7011/S7015 series
S7010-1006/-1007
a PHOTOSENSITIVE SURFACE 1.3 0.3
10.05 0.25
31.75 0.3 1st PIN INDICATION PAD
40.64 0.41 1st PIN INDICATION PAD
3.0
0.46 2.54 27.94
2.54 27.94
0.46
KMPDA0053EA
3.0
10.05 0.25
b
b
KMPDA0054EA
S7010-0908
a PHOTOSENSITIVE SURFACE
S7010-1008
PHOTOSENSITIVE SURFACE
1.3 0.3
a
1.3 0.3
14.99 0.25
40.64 0.0.41
32.0 0.3 1st PIN INDICATION PAD
1st PIN INDICATION PAD
3.0
3.0
0.51 2.54 27.94
0.51 2.54 27.94
KMPDA0055EA
14.99 0.25
b
b
KMPDA0056EA
Type No. S7010-0906 S7010-0907 S7010-0908 S7010-1006 S7010-1007 S7010-1008
Active area a b 12.288 (H) 1.440 (V) 12.288 (H) 2.976 (V) 12.288 (H) 6.048 (V) 24.576 (H) 1.440 (V) 24.576 (H) 2.976 (V) 24.576 (H) 6.048 (V)
6
CCD area image sensor
S7010/S7011/S7015 series
S7011-1006/-1007
S7011-0906/-0907
a
b c
3.4 0.4
a
b c
3.4 0.4
14.99 0.25
4.0
5.0 32.0 0.3 50.0 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE
5.0 40.64 0.41 58.84 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE
TE-COOLER
TE-COOLER
0.46 2.54 27.94
KMPDA0057EB
2.54 27.94
7.65 0.5
0.46
7.65 0.5
14.99 0.25
12.0
4.0
12.0
KMPDA0058EB
Type No. S7011-0906 S7011-0907 S7011-1006 S7011-1007
a 12.288 (H) 12.288 (H) 24.576 (H) 24.576 (H)
Active area b 1.440 (V) 2.976 (V) 1.440 (V) 2.976 (V)
c 7.5 7.1 7.5 7.1
S7015-0908
WINDOW 16.3 ACTIVE AREA 12.288
S7015-1008
WINDOW 28.6 ACTIVE AREA 24.576
6.048
19.0
6.048
19.0
22.4
22.9
8.2
4.0
2.54 34.0 42.0 50.0
2.54 44.0 52.0 60.0
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
4.0
22.4
22.9
8.2
7.3
7.7
TE-COOLER
5.2
6.7
TE-COOLER
1.0
1.0
(24x) 0.5
(24x) 0.5
KMPDA0044EC
5.2
6.7
7.3
KMPDA0045EB
7.7
7
CCD area image sensor
I Pin connections
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Symbol
S7010/S7011/S7015 series
S7015 series Description Reset gate Reset drain Output transistor source Output transistor drain Output gate Summing gate Thermistor Thermistor CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate TE-coolerTE-cooler+ Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) =RD 0V 0V
RG RD OS OD OG SG NC NC
S7010 series Description Reset gate Reset drain Output transistor source Output transistor drain Output gate Summing gate
Symbol
P2H P1H IG2H IG1H ISH P2V P1V TG *18 NC NC NC SS NC ISV IG2V IG1V
CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate
RG RD OS OD OG SG Th1 Th2
P2H P1H IG2H IG1H ISH P2V P1V TG *18 NC PP+ SS NC ISV IG2V IG1V
S7011 series Description Reset gate Reset drain Output transistor source Output transistor drain Output gate Summing gate Thermistor Thermistor CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate TE-coolerTE-cooler+ Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1)
Symbol
Remark
RG RD OS OD OG SG Th1 Th2
=P2H
P2H P1H IG2H IG1H ISH P2V P1V TG *18 NC PP+ SS NC ISV IG2V IG1V
0V 0V =RD
=P2V
Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1)
*18 TG: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V.
I Specifications of built-in TE-cooler (Typ.)
Parameter Symbol Condition
Internal resistance Rint Ta=25 C 2.5 1.2 W Maximum current *19 Imax Tc *20=Th *21=25 C 1.5 3.0 A Maximum voltage Vmax Tc *20=Th *21=25 C 3.8 3.6 V Maximum heat Qmax 3.4 6.7 3.4 5.1 W absorption *22 Maximum temperature 70 C of heat radiating side *19: Maximum current Imax: If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *20: Temperature of the cooling side of thermoelectric cooler. *21: Temperature of the heat radiating side of thermoelectric cooler. *22: Maximum heat absorption Qmax. This is a heat absorption when the maximum current is supplied to the TE-cooler.
S7011-0906/ -0907 2.8 1.5 4.4
S7011-1006/ -1007 6.0 1.5 8.8
S7015-0908
S7015-1008
Unit
8
CCD area image sensor
I TE-cooler characteristics S7011-0906/-0907
S7010/S7011/S7015 series
S7011-1006/-1007
5
(Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT
20
10
(Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT
20
CCD TEMPERATURE (C)
3
0
6
0
2
-10
4
-10
1
-20
2
-20
0
0
0.5
1.0
1.5
-30 2.0
0 0 0.5 1.0 1.5
-30 2.0
CURRENT (A)
KMPDB0176EB
CURRENT (A)
KMPDB0177EB
S7015-0908
S7015-1008
7 6 5
(Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT
30 20
7 6
(Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT
30 20 10 0 -10 -20 -30 -40
CCD TEMPERATURE (C)
10 0 -10 -20 -30 -40 2.0
5
4 3 2 1 0
4 3 2 1 0 0 1 2 3 4
0
0.5
1.0
1.5
CURRENT (A)
KMPDB0178EA
CURRENT (A)
KMPDB0179EA
CCD TEMPERATURE (C)
VOLTAGE (V)
VOLTAGE (V)
CCD TEMPERATURE (C)
4
10
8
10
VOLTAGE (V)
VOLTAGE (V)
9
CCD area image sensor
I Specifications of built-in temperature sensor
S7010/S7011/S7015 series
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1 = R2 x expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) The characteristics of the thermistor used are as follows. R (298K) = 10 kW B (298K / 323K) = 3450 K
RESISTANCE
1 M (Typ. Ta=25 C)
100 k
10 k 220
240
260
280
300
TEMPERATURE (K)
I Precaution for use (Electrostatic countermeasures)
KMPDB0111EA
G Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. G Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. G Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. G Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
I Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Multichannel detector head (C7020, C7021, C7025)
Features
C7021: for S7011 series C7025: for S7015 series l Area scanning or full line-binnng operation l Readout frequency: 250 kHz l Readout noise: 20 e-rms l T=50 C (T changes by radiation method.)
l C7020: for S7010 series
Input
Supply voltage
Master start Master clock
Symbol VD1 VA1+ VA1VA2 VD2 Vp VF fms fmc
Value +5 Vdc, 200 mA +15 Vdc, +100 mA -15 Vdc, -100 mA +24 Vdc, 30 mA +5 Vdc, 30 mA (C7021, C7025) +5 Vdc, 2.5 A (C7021, C7025) +12 Vdc, 100 mA (C7021, C7025) HCMOS logic compatible HCMOS logic compatible, 1 MHz
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1022E09 Feb. 2003 DN
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